108 silicon npn triple diffused planar transistor (complement to type 2sa1695) application : audio and general purpose symbol v cbo v ceo v ebo i c i b p c tj t stg 2sC4468 200 140 6 10 4 100(tc=25?) 150 ?5 to +150 unit v v v a a w ? ? n absolute maximum ratings n electrical characteristics symbol i cbo i ebo v (br)ceo h fe v ce (sat) f t c ob 2sC4468 10 max 10 max 140 min 50 min * 0.5 max 20 typ 250 typ unit m a m a v v mhz pf conditions v cb =200v v eb =6v i c =50ma v ce =4v, i c =3a i c =5a, i b =0.5a v ce =12v, i e =?.5a v cb =10v, f=1mhz 2sC4468 (ta=25?) (ta=25?) i c v ce characteristics (typical) h fe i c characteristics (typical) h fe i c temperature characteristics (typical) q j-a e t characteristics i c e v be temperature characteristics (typical) v ce (sat) e i b characteristics (typical) pc e ta derating safe operating area (single pulse) f t e i e characteristics (typical) 0 3 2 1 0 0.5 1.0 2.0 1.5 base current i b (a) collector-emitter saturation voltage v ce(sat) (v) i c =10a 5a 0 10 2 6 4 8 02 1 base-emittor voltage v be (v) collector current i c (a) (v ce =4v) 125?c (case temp) 25?c (case temp) e30?c (case temp) 0.1 1 3 0.5 1 10 100 1000 2000 time t(ms) transient thermal resistance q j-a (?c/w) 100 50 3.5 0 0 25 50 75 100 125 150 ambient temperature ta(?c) maximum power dissipation p c (w) with infinite heatsink without heatsink 10 5 3 100 200 50 0.1 1 0.5 10 30 5 collector-emitter voltage v ce (v) collector current i c (a) dc 100ms 3ms 10ms without heatsink natural cooling 0.02 0.1 0.5 1 5 10 20 50 100 200 collector current i c (a) dc current gain h fe (v ce =4v) (v ce =4v) typ 0 0 2 4 6 10 8 2 134 collector-emitter voltage v ce (v) collector current i c (a) 150ma 200ma 100ma 75ma 50ma 20ma i b =10ma 300ma 400ma 0.02 0.5 5 1 20 50 300 100 0.1 10 collector current i c (a) dc current gain h fe 125?c 25?c e30?c e0.02 e0.1 e1 e10 0 10 20 40 30 cut-off frequency f t (mh z ) (v ce =12v) emitter current i e (a) typ n typical switching characteristics (common emitter) v cc (v) 60 r l ( ) 12 i c (a) 5 v bb2 (v) ? i b2 (a) ?.5 t on ( m s) 0.24 typ t stg ( m s) 4.32 typ t f ( m s) 0.40 typ i b1 (a) 0.5 v bb1 (v) 10 external dimensions mt-100(to3p) 15.6 ?.4 9.6 19.9 ?.3 4.0 2.0 5.0 ?.2 1.8 ?.2 ?.1 2 3 1.05 +0.2 -0.1 20.0min 4.0max be 5.45 ?.1 5.45 ?.1 c 4.8 ?.2 0.65 +0.2 -0.1 1.4 2.0 ?.1 a b weight : approx 6.0g a. type no. b. lot no. * h fe rank o(50 to100), p(70 to140), y(90 to180)
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